Ngophuhliso olukhawulezayo lwe-5G, i-intelligence intelligence (AI) kunye ne-Intanethi yezinto (IoT), imfuno yezinto eziphezulu zokusebenza kwi-semiconductor industry iye yanda kakhulu.IZirconium tetrachloride (ZrCl₄), njengento ebalulekileyo ye-semiconductor, iye yaba yinto efunekayo ekrwada kwiichips zenkqubo ephuculweyo (ezifana ne-3nm / 2nm) ngenxa yendima yayo ephambili ekulungiseleleni iifilimu eziphezulu ze-k.
Zirconium tetrachloride kunye neefilimu eziphezulu-k
Kwimveliso ye-semiconductor, iifilimu eziphezulu ze-k zingenye yezinto eziphambili zokuphucula ukusebenza kwe-chip. Njengoko inkqubo yokuncipha okuqhubekayo kwezinto zesango ze-silicon-based dielectric (ezifana ne-SiO₂), ubukhulu bazo busondela kumda womzimba, okubangele ukuvuza okunyukayo kunye nokwanda okukhulu kokusetyenziswa kwamandla. Izinto eziphezulu ze-k (ezifana ne-zirconium oxide, i-hafnium oxide, njl.) zinokunyusa ngokufanelekileyo ubukhulu bomzimba we-dielectric layer, ukunciphisa umphumo we-tunneling, kwaye ngaloo ndlela kuphuculwe ukuzinza kunye nokusebenza kwezixhobo zombane.
I-Zirconium tetrachloride iyisandulela esibalulekileyo sokulungiselela iifilimu eziphezulu ze-k. I-Zirconium tetrachloride inokuguqulwa ibe yifilimu ecocekileyo ye-zirconium oxide ngokusebenzisa iinkqubo ezifana ne-chemical vapor deposition (CVD) okanye i-atomic layer deposition (ALD). Ezi bhanyabhanya zineempawu ezibalaseleyo ze-dielectric kwaye zinokuphucula kakhulu ukusebenza kunye nokusebenza kakuhle kweechips. Ngokomzekelo, i-TSMC yazisa iindidi zezixhobo ezintsha kunye nokuphuculwa kwenkqubo kwinkqubo yayo ye-2nm, kubandakanywa ukusetyenziswa kweefilimu eziphezulu ze-dielectric rhoqo, eziye zafumana ukwanda kwe-transistor density kunye nokunciphisa ukusetyenziswa kwamandla.
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Kwikhonkco lokubonelela nge-semiconductor yehlabathi jikelele, unikezelo kunye nepateni yokuvelisazirconium tetrachloridezibalulekile kuphuhliso loshishino. Okwangoku, amazwe kunye nemimandla efana neTshayina, iUnited States kunye neJapan ikwindawo ebalulekileyo ekuveliseni i-zirconium tetrachloride kunye nezinto ezinxulumene ne-dielectric ephezulu.
Ukuphumelela kwezobuchwepheshe kunye namathemba ekamva
Ukuphumelela kwezobuchwepheshe zizinto eziphambili ekukhuthazeni ukusetyenziswa kwe-zirconium tetrachloride kwishishini le-semiconductor. Kwiminyaka yakutshanje, inkqubo yokwenziwa kwe-atomic layer deposition (ALD) ibe yeyona ndawo iphambili yophando. Inkqubo ye-ALD inokulawula ngokuchanekileyo ubukhulu kunye nokufana kwefilimu kwi-nanoscale, ngaloo ndlela iphucula umgangatho weefilimu eziphezulu ze-dielectric rhoqo. Ngokomzekelo, iqela lophando likaLiu Lei weYunivesithi yasePeking lilungiselele ifilimu ye-dielectric eqhubekayo ye-amorphous ngendlela yekhemikhali emanzi kwaye isetyenziswe ngempumelelo kwizixhobo ze-elektroniki ze-semiconductor ze-electronic.
Ukongeza, njengoko iinkqubo ze-semiconductor ziqhubeka nokuqhubela phambili ukuya kubukhulu obuncinci, ububanzi besicelo se-zirconium tetrachloride nayo iyanda. Ngokomzekelo, i-TSMC iceba ukuphumeza ukuveliswa kobuninzi be-teknoloji ye-2nm kwisiqingatha sesibini se-2025, kwaye i-Samsung iphinda ikhuthaze uphando kunye nophuhliso lwenkqubo yayo ye-2nm. Ukufezekiswa kwezi nkqubo eziphambili zingenakuhlukaniswa nokuxhaswa kweefilimu ezingapheliyo ze-dielectric, kunye ne-zirconium tetrachloride, njengento ephambili yezinto ezibonakalayo, ibaluleke kakhulu.
Isishwankathelo, indima ephambili ye-zirconium tetrachloride kwishishini le-semiconductor liya likhula ngakumbi. Ngokuthandwa kwe-5G, i-AI kunye ne-Intanethi yeZinto, imfuno yeechips ezisebenza kakhulu iyaqhubeka nokukhula. I-Zirconium tetrachloride, njenge-precursor ebalulekileyo yeefilimu ze-high-dielectric rhoqo, iya kudlala indima engenakulinganiswa ekukhuthazeni ukuphuhliswa kweteknoloji ye-chip yesizukulwana esilandelayo. Kwixesha elizayo, kunye nokuqhubela phambili kweteknoloji kunye nokulungiswa kwekhonkco lokubonelela ngehlabathi jikelele, amathuba okusetyenziswa kwe-zirconium tetrachloride aya kuba banzi.
Ixesha lokuposa: Apr-14-2025