Intshayelelo emfutshane
Igama leMveliso: P-uhlobo lwe-Bi0.5Sb1.5Te3
N-uhlobo lwe-Bi2Te2.7Se0.3
Ubunyulu: 99.99%, 99.999%
Imbonakalo: Vimba ingot okanye umgubo
Uphawu: Epoch-Chem
Ukubonelela nge-ternary thermoelectric bismuth telluride P-uhlobo lwe-Bi0.5Sb1.5Te3 kunye nohlobo lwe-N lwe-Bi2Te2.7Se0.3
Ukusebenza
Into | bismuth telluride, bi2te3 |
N uhlobo | Bi2Te2.7Se0.3 |
Uhlobo lwe-P | Bi0.5Te3.0Sb1.5 |
Inkcazo | Vimba ingot okanye umgubo |
ZT | 1.15 |
Ukupakisha | ukupakisha ibhegi vacumm |
Isicelo | ifriji, ukupholisa, thermo, uphando lwesayensi |
Uphawu | Ixesha |
Specification | P-Uhlobo | N-Uhlobo | Qaphela |
Chwetheza inombolo | I-BiTe- P-2 | BiTe- N-2 | |
Ububanzi (mm) | 31±2 | 31±2 | |
Ubude (mm) | 250±30 | 250±30 | |
Ubuninzi (g/cm3) | 6.8 | 7.8 | |
Ukuhanjiswa kombane | 2000-6000 | 2000-6000 | 300K |
I-Seebeck Coefficient α(μ UK-1) | ≥140 | ≥140 | 300K |
I-Thermal conductivity k(Wm-1 K) | 2.0-2.5 | 2.0-2.5 | 300K |
Umgubo weFactor P(WmK-2) | ≥0.005 | ≥0.005 | 300K |
Ixabiso le-ZT | ≥0.7 | ≥0.7 | 300K |
Uphawu | Epoch-Chem |
Ukwenza i-P/N junction, esetyenziswa kwifriji ye-semiconductor, ukuveliswa komgubo we-thermoelectric njl.
Ewe, kunjalo, sinokubonelela nge-MSDS, i-COA, i-MOA, iSatifikethi seMvelaphi njl.
Phambi kokuhanjiswa, sinokunceda ukwenza amalungiselelo ovavanyo lwe-SGS, okanye silungiselele iisampulu ukuze uqhubeke novavanyo lomgangatho.
Ewe, kunjalo, bonke abathengi abavela phesheya bamkelekile
Ewe, indlela yokuthumela kunye nexesha kunokuxoxwa.
Ewe, sineelebhu ezintathu ezizimeleyo ezinokwenza udibaniso lwabathengi, uphando lwendlela yokudibanisa njl.njl.
Ewe, kunjalo, asijoli nje ekuboneleleni ngeemveliso, kodwa kubandakanywa nenkxaso yobugcisa, kunye nokuhle emva kokuthengisa inkonzo.